New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors

Markus Broell; Petrus Sundgren; Andreas Rudolph; Wolfgang Schmid; Anton Vogl; Martin Behringer

doi:10.1117/12.2039078

27 February 2014 New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors

Markus Broell, Petrus Sundgren, Andreas Rudolph, Wolfgang Schmid, Anton Vogl, Martin Behringer

Author Affiliations +

Proceedings Volume 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII; 90030L (2014) https://doi.org/10.1117/12.2039078
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

We present our latest results on developments of infrared and red light emitting diodes. Both chiptypes are based on the Thinfilm technology. For infrared the brightness has been raised by 25% with respect to former products in a package with standard silicon casting, corresponding to a brightness increase of 33% for the bare chip. In a lab package a wallplug efficiency of more than 72% at a wavelength of 850nm could be reached. For red InGaAlP LEDs we could demonstrate a light output in excess of 200lm/W and a brightness of 133lm at a typical operating current of 350mA.

Citation Download Citation

Markus Broell, Petrus Sundgren, Andreas Rudolph, Wolfgang Schmid, Anton Vogl, and Martin Behringer "New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90030L (27 February 2014); https://doi.org/10.1117/12.2039078

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