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17 April 2014 Comparison of EUV patterning performance between PTD and NTD for 1Xnm DRAM
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Recently in the R&D area DRAM has shrunk to 1X nm, at the same time patterning technology has been one of the major challenges on 1X nm DRAM. Less than 20nm line and space and less than 30nm contact hole patterning are basically needed for 1X nm DRAM. Currently ArF immersion extension such as DPT (Double Patterning Technology), SADP (Self-Aligned Double Patterning) and SAQP (Self-Aligned Quadruple Patterning) shows robust patterning performance relative to EUV/DSA and become established process as a baseline for 1Xnm DRAM. But cost of ownership and process complexity of DPT/SADP can be the big burden for volume production. Furthermore too many DPT/SADP can make DRAM shrink meaningless. In spite of current issues on DPT/SADP, EUV source power has been the most critical issue so far. And now source power issue is pushing development of high sensitive EUV resist and related process. In this paper, author will compare EUV PTD and NTD in view of image contrast and swelling, also evaluate patterning performance between EUV PTD and NTD, and finally describe current status and issues of EUV NTD.
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Changil Oh, Hyungsuk Seo, Eunjoo Park, Junghyung Lee, Cheolkyu Bok, Wontaik Kwon, and Sungki Park "Comparison of EUV patterning performance between PTD and NTD for 1Xnm DRAM", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 904808 (17 April 2014);

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