Paper
17 April 2014 Particle control challenges in process chemicals and ultra-pure water for sub-10nm technology nodes
Abbas Rastegar, Martin Samayoa, Matthew House, Hüseyin Kurtuldu, Sang-Kee Eah, Lauren Morse, Jenah Harris-Jones
Author Affiliations +
Abstract
Particle contamination in ultra-pure water (UPW) and chemicals will eventually end up on the surface of a wafer and may result in killer defects. To improve the semiconductor processing yield in sub-10 nm half pitch nodes, it is necessary to control particle defectivity. In a systematic study of all major techniques for particle detection, counting, and sizing in solutions, we have shown that there is a gap in the required particle metrology which needs to be addressed by the industry. To reduce particles in solutions and improve filter retention for sub-10 nm particles with very low densities (<10 particles/mL), liquid particle counters that are able to detect small particles at low densities are required. Non-volatile residues in chemicals and UPW can result in nanoparticles. Measuring absolute non-volatile residues in UPW with concentrations in the ppb range is a challenge. However, by using energy-dispersive spectroscopy (EDS) analysis through transmission electron microscopy (TEM) of non-volatile residues we found silica both in dissolved and colloidal particle form which is present in one of the cleanest UPW that we tested. A particle capture/release technique was developed at SEMATECH which is able to collect particles from UPW and release them in a controlled manner. Using this system we showed sub-10 nm particles are present in UPW. In addition to colloidal silica, agglomerated carbon containing particles were also found in UPW.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Abbas Rastegar, Martin Samayoa, Matthew House, Hüseyin Kurtuldu, Sang-Kee Eah, Lauren Morse, and Jenah Harris-Jones "Particle control challenges in process chemicals and ultra-pure water for sub-10nm technology nodes", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480P (17 April 2014); https://doi.org/10.1117/12.2048080
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Particles

Atmospheric particles

Silica

Extreme ultraviolet

Semiconducting wafers

Transmission electron microscopy

Photomasks

Back to Top