Optimization of processing parameters and metrology for novel NCA negative resists for NGL

Vikram Singh; V. S. V. Satyanarayana; Felipe Kessler; Francine R. Scheffer; Daniel E. Weibel; Satinder K. Sharma; Subrata Ghosh; Kenneth E. Gonsalves

doi:10.1117/12.2045882

17 April 2014 Optimization of processing parameters and metrology for novel NCA negative resists for NGL

Vikram Singh, V. S. V. Satyanarayana, Felipe Kessler, Francine R. Scheffer, Daniel E. Weibel, Satinder K. Sharma, Subrata Ghosh, Kenneth E. Gonsalves

Author Affiliations +

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90481Y (2014) https://doi.org/10.1117/12.2045882
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

It is expected that EUV resists must simultaneously pattern 20-nm half-pitch and below, with an LWR of <1.8 nm, and a sensitivity of 5–20 mJ/cm². In order to make a resist perform optimally, new resist chemistry is required. One such approach being investigated by us is the development of polymeric non-CAR negative photo resists for sub 16 nm technology which is directly sensitive to radiation without utilizing the concept of chemical amplification (CARs). These resist designs are accomplished by homopolymers which are prepared from monomers containing sulfonium groups. We have achieved 20 nm patterns by e-beam lithography using this system. Here we will discuss in detail process parameters such as: spinning conditions for film thicknesses <50 nm and resulting surface topographies, baking regimes, exposure conditions and protocols on sensitivity, contrast, resolution and LER/LWR. Etch resistance data on these thin films will also be provided. Our results are aimed to provide a clear understanding of how these critical steps in the lithographic imaging process will affect extendibility of the non-CAR resist concept to sub 20 nanoscale features. Photodynamics and EUV exposure data will be covered.

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Vikram Singh, V. S. V. Satyanarayana, Felipe Kessler, Francine R. Scheffer, Daniel E. Weibel, Satinder K. Sharma, Subrata Ghosh, and Kenneth E. Gonsalves "Optimization of processing parameters and metrology for novel NCA negative resists for NGL", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481Y (17 April 2014); https://doi.org/10.1117/12.2045882

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