Experimental verification of the effect of phase defect shape on ABI signal intensity

Noriaki Takagi; Tsuneo Terasawa; Yukiyasu Arisawa

doi:10.1117/12.2046139

17 April 2014 Experimental verification of the effect of phase defect shape on ABI signal intensity

Noriaki Takagi, Tsuneo Terasawa, Yukiyasu Arisawa

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 904822 (2014) https://doi.org/10.1117/12.2046139
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

In this study, influence of geometric features of phase defect on EUV optical images, such as dark field images(ABI tool) and bright field images (Exposure tool), was studied with experiment and simulation. It is confirmed that ABI signal intensity has a direct relationship not only with defect volume but also with geometric features of the phase defect. A new method for the making of phase defect models for simulation purpose was attempted. With this new method, the simulated ABI signal intensity exhibited a good proportionality relationship with the experimentally obtained ABI signal intensity. This method is believed to be effective in the estimation of ABI signal intensity with simulation. These results lead to the conclusion that it is important to take into consideration the geometric features of phase defects when a relationship between ABI signal intensity and phase defect feature is to be examined. Also, the relationship between ABI signal intensity and impact of defect on wafer was studied with simulation. In this study, many geometric types of phase defects were used, and relationships between these defects and their impacts on wafers were studied. As a result, it was confirmed that the geometric features did not strongly affect the relationship between the ABI signal intensity and the defects’ impacts on wafer however the ABI signal intensity is found to have a close relationship with impact of defect on wafer. These results lead to the conclusion that information about ABI signal intensity is important not only for the detection of phase defect but also for estimating the impact of phase defects on wafers.

Citation Download Citation

Noriaki Takagi, Tsuneo Terasawa, and Yukiyasu Arisawa "Experimental verification of the effect of phase defect shape on ABI signal intensity", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 904822 (17 April 2014); https://doi.org/10.1117/12.2046139

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconducting wafers

Atomic force microscopy

Data modeling

Inspection

Extreme ultraviolet lithography

3D modeling

Defect detection

Show All Keywords

Keywords/Phrases

Search In:

Publication Years