Paper
2 April 2014 Novel three dimensional (3D) CD-SEM profile measurements
Wataru Ito, Benjamin Bunday, Sumito Harada, Aaron Cordes, Tsutomu Murakawa, Abraham Arceo, Makoto Yoshikawa, Toshihiko Hara, Takehito Arai, Soichi Shida, Masayuki Yamagata, Jun Matsumoto, Takayuki Nakamura
Author Affiliations +
Abstract
A new SEM technology is becoming available that allows image-based 3D profile metrology of nanoscale features. Using patented multi-channel detector technology, this system can acquire information of surface concave and convex features, and sidewall angle (SWA) and height of profiles, quickly and non-destructively for nanoscale structures such as fin field-effect transistors (FinFETs), using electron beam technology with its well-known long probe lifetime, stability and small probe size. Here we evaluate this new technology and demonstrate its applicability to contemporary advanced structures such as FinFETs, including not only CD, but also profile, SWA, top corner rounding (TCR) and bottom corner rounding (BCR).
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wataru Ito, Benjamin Bunday, Sumito Harada, Aaron Cordes, Tsutomu Murakawa, Abraham Arceo, Makoto Yoshikawa, Toshihiko Hara, Takehito Arai, Soichi Shida, Masayuki Yamagata, Jun Matsumoto, and Takayuki Nakamura "Novel three dimensional (3D) CD-SEM profile measurements", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500D (2 April 2014); https://doi.org/10.1117/12.2047374
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Cited by 3 scholarly publications.
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KEYWORDS
Atomic force microscopy

3D image processing

3D metrology

Sensors

Semiconducting wafers

Metrology

Line edge roughness

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