Robust complementary technique with multiple-patterning for sub-10 nm node device

Kenichi Oyama; Shohei Yamauchi; Sakurako Natori; Arisa Hara; Masatoshi Yamato; Hidetami Yaegashi

doi:10.1117/12.2046236

27 March 2014 Robust complementary technique with multiple-patterning for sub-10 nm node device

Kenichi Oyama, Shohei Yamauchi, Sakurako Natori, Arisa Hara, Masatoshi Yamato, Hidetami Yaegashi

Proceedings Volume 9051, Advances in Patterning Materials and Processes XXXI; 90510V (2014) https://doi.org/10.1117/12.2046236
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) lithography is the leading candidate for sub-20nm half-pitch (hp) patterning solution, but the development of a high-output light source is still in progress thereby delaying the adoption of EUV for mass production. The evolution of 193nm immersion lithography-an exposure technology currently used in the mass production of all advanced devices-must therefore be extended, and to this end, self-aligned multiple patterning (SAMP) processes have come to be used to achieve further down scaling. To date, we have demonstrated the effectiveness of self-aligned double patterning (SADP) and self-aligned quadruple patterning (SAQP) as innovative processes and have reported on world-first scaling results at SPIE on several occasions. However, for critical layers in FinFET devices that presume a 1D cell design, there is also a need not just for the scaling of grating patterns but also for line-cutting techniques (grating and cutting). Under the theme of existing- technology extension to sub-10nm logic nodes, this paper presents the potential solutions of sub-10nm hp resolution by self-aligned octuple patterning (SAOP) and discusses the limits of shrink technology in cutting patterns.

Citation Download Citation

Kenichi Oyama, Shohei Yamauchi, Sakurako Natori, Arisa Hara, Masatoshi Yamato, and Hidetami Yaegashi "Robust complementary technique with multiple-patterning for sub-10 nm node device", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90510V (27 March 2014); https://doi.org/10.1117/12.2046236

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