Advanced OPC Mask-3D and Resist-3D modeling

A. Szucs; J. Planchot; V. Farys; E. Yesilada; L. Depre; S. Kapasi; C. Gourgon; M. Besacier; O. Mouraille; F. Driessen

doi:10.1117/12.2047281

31 March 2014 Advanced OPC Mask-3D and Resist-3D modeling

A. Szucs, J. Planchot, V. Farys, E. Yesilada, L. Depre, S. Kapasi, C. Gourgon, M. Besacier, O. Mouraille, F. Driessen

Proceedings Volume 9052, Optical Microlithography XXVII; 905208 (2014) https://doi.org/10.1117/12.2047281
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

The objective of this paper is to extend the ability of a more stable overall process control for the 28 nm Metal layer. A method to better control complex 2D-layout structures for this node is described. Challenges are coming from the fact that the structures, which limit the process window are mainly of 2D routing nature and are difficult to monitor. Within the framework of this study the emphasis is on how to predict these process-window-limiting structures upfront, to identify root causes and to assist in easier monitoring solutions enhancing the process control. To address those challenges, the first step is the construction of a reliable Mask-3D and Resist-3D model. Advanced 3Dmodeling allows better prediction of process variation upfront. Furthermore it allows highlighting critical structures impacted by either best-focus shifts or by low-contrast resist-imaging effects, which then will be transferred non-linearly after etch. This paper has a tight attention on measuring the 3D nature of the resist profiles by multiple experimental techniques such as Cross-section scanning electron microscopy methods (X-SEM) and atomic force microscopy (AFM). Based on these measurements the most reliable data are selected to calibrate full-chip Resist-3D model with. Current results show efficient profile matching among the calibrated R3D model, wafer AFM and X-SEM measurements. In parallel this study enables the application of a new metric as result of the resist profiles behavior in function of exposure dose. In addition it renders the importance on the resist shape. Together these items are reflected to be efficient support on process optimization and improvement on the process control.

Citation Download Citation

A. Szucs, J. Planchot, V. Farys, E. Yesilada, L. Depre, S. Kapasi, C. Gourgon, M. Besacier, O. Mouraille, and F. Driessen "Advanced OPC Mask-3D and Resist-3D modeling ", Proc. SPIE 9052, Optical Microlithography XXVII, 905208 (31 March 2014); https://doi.org/10.1117/12.2047281

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