Paper
31 March 2014 Model-based OPC using the MEEF matrix II
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Abstract
In the traditional OPC (Optical Proximity Correction) procedure, edges in a layout are broken into fragments and each fragment is iteratively adjusted by multiplying its EPE (Edge Placement Error) with a carefully selected or calculated feedback. However, the ever-shrinking technology nodes in recent years bring stronger fragment to fragment interaction. The feedback tuning approach driven by a single fragment EPE is no longer sufficient to achieve good pattern fidelity with reasonable turn-around-time. Various novel techniques such as matrix OPC [1, 2] have been developed in the past to incorporate the influence of neighboring fragments into each fragment’s movement. Here we introduce a neighboraware feedback controller for full chip level OPC applications, following the concept and algorithms of the matrix OPC that were laid out in Cobb and Granik’s work [1]. We present experimental results and discuss the benefits and challenges of the proposed feedback controller.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junjiang Lei, Le Hong, George Lippincott, and James Word "Model-based OPC using the MEEF matrix II", Proc. SPIE 9052, Optical Microlithography XXVII, 90520N (31 March 2014); https://doi.org/10.1117/12.2046635
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Optical proximity correction

Photomasks

Feedback control

Semiconducting wafers

3D modeling

Model-based design

Computer simulations

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