Hybrid OPC modeling with SEM contour technique for 10nm node process

Keiichiro Hitomi; Scott Halle; Marshal Miller; Ioana Graur; Nicole Saulnier; Derren Dunn; Nobuhiro Okai; Shoji Hotta; Atsuko Yamaguchi; Hitoshi Komuro; Toru Ishimoto; Shunsuke Koshihara; Yutaka Hojo

doi:10.1117/12.2047678

31 March 2014 Hybrid OPC modeling with SEM contour technique for 10nm node process

Keiichiro Hitomi, Scott Halle, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Shoji Hotta, Atsuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, Yutaka Hojo

Author Affiliations +

Proceedings Volume 9052, Optical Microlithography XXVII; 90520W (2014) https://doi.org/10.1117/12.2047678
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Hybrid OPC modeling is investigated using both CDs from 1D and simple 2D structures and contours extracted from complex 2D structures, which are obtained by a Critical Dimension-Scanning Electron Microscope (CD-SEM). Recent studies have addressed some of key issues needed for the implementation of contour extraction, including an edge detection algorithm consistent with conventional CD measurements, contour averaging and contour alignment. Firstly, pattern contours obtained from CD-SEM images were used to complement traditional site driven CD metrology for the calibration of OPC models for both metal and contact layers of 10 nm-node logic device, developed in Albany Nano-Tech. The accuracy of hybrid OPC model was compared with that of conventional OPC model, which was created with only CD data. Accuracy of the model, defined as total error root-mean-square (RMS), was improved by 23% with the use of hybrid OPC modeling for contact layer and 18% for metal layer, respectively. Pattern specific benefit of hybrid modeling was also examined. Resist shrink correction was applied to contours extracted from CD-SEM images in order to improve accuracy of the contours, and shrink corrected contours were used for OPC modeling. The accuracy of OPC model with shrink correction was compared with that without shrink correction, and total error RMS was decreased by 0.2nm (12%) with shrink correction technique. Variation of model accuracy among 8 modeling runs with different model calibration patterns was reduced by applying shrink correction. The shrink correction of contours can improve accuracy and stability of OPC model.

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Keiichiro Hitomi, Scott Halle, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Shoji Hotta, Atsuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, and Yutaka Hojo "Hybrid OPC modeling with SEM contour technique for 10nm node process", Proc. SPIE 9052, Optical Microlithography XXVII, 90520W (31 March 2014); https://doi.org/10.1117/12.2047678

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