Fast integral rigorous modeling applied to wafer topography effect prediction on 2x nm bulk technologies

J.-C. Michel; J.-C. Le Denmat; A. Tishchenko; Y. Jourlin

doi:10.1117/12.2045899

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31 March 2014 Fast integral rigorous modeling applied to wafer topography effect prediction on 2x nm bulk technologies

J.-C. Michel, J.-C. Le Denmat, A. Tishchenko, Y. Jourlin

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Proceedings Volume 9052, Optical Microlithography XXVII; 905223 (2014) https://doi.org/10.1117/12.2045899
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Reflection by wafer topography and underlying layers during optical lithography can cause unwanted overexposure in the resist [1]. In most cases, the use of bottom anti reflective coating limits this effect. However, this solution is not always suitable because of process complexity, cost and cycle time penalty, as for ionic implantation lithography process in 28nm bulk technology. As a consequence, computational lithography solutions are currently under development to simulate and correct wafer topographical effects [2], [3]. For ionic implantation source drain (SD) photolithography step, wafer topography influences resulting in implant pattern variation are various: active silicon areas, Poly patterns, Shallow Trench Isolation (STI) and topographical transitions between these areas. In 28nm bulk SD process step, the large number of wafer stack variations involved in implant pattern modulation implies a complex modeling of optical proximity effects. Furthermore, those topography effects are expected to increase with wafer stack complexity through technology node downscaling evolution. In this context, rigorous simulation can bring significant value for wafer topography modeling evolution in R and D process development environment. Unfortunately, classical rigorous simulation engines are rapidly run time and memory limited with pattern complexity for multiple under layer wafer topography simulation. A presentation of a fast rigorous Maxwell’s equation solving algorithm integrated into a photolithography proximity effects simulation flow is detailed in this paper. Accuracy, run time and memory consumption of this fast rigorous modeling engine is presented through the simulation of wafer topography effects during ionic implantation SD lithography step in 28nm bulk technology. Also, run time and memory consumption comparison is shown between presented fast rigorous modeling and classical rigorous RCWA method through simulation of design of interest. Finally, integration opportunity of such fast rigorous modeling method into OPC flow is discussed in this paper.

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J.-C. Michel, J.-C. Le Denmat, A. Tishchenko, and Y. Jourlin "Fast integral rigorous modeling applied to wafer topography effect prediction on 2x nm bulk technologies", Proc. SPIE 9052, Optical Microlithography XXVII, 905223 (31 March 2014); https://doi.org/10.1117/12.2045899

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