Paper
28 March 2014 Bridging the gap from mask to physical design for multiple patterning lithography
Author Affiliations +
Abstract
Due to the delay of EUVL, multiple patterning techniques have been used to extend the 193nm lithography to 22nm/14nm nodes, and possibly further. There are many studies on MPL layout decompositions at the mask synthesis stage to resolve the coloring conflicts, minimize the stitches, balance the mask density, or even mitigate the undesirable overlay effects. Meanwhile, there are studies showing that it is very important to consider the multiple patterning implications at earlier physical design stages so that the overall design and manufacturing closure can be reached. In this paper, we will show some recent results and propose a unified physical design methodology for standard cell compliance, pin access, routing, and placement to bridge the gap from mask/layout decomposition to physical design, while accommodating various requirements from double/triple patterning lithography in certain "correct by construction" manner.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bei Yu, Jhih-Rong Gao, Xiaoqing Xu, and David Z. Pan "Bridging the gap from mask to physical design for multiple patterning lithography", Proc. SPIE 9053, Design-Process-Technology Co-optimization for Manufacturability VIII, 905308 (28 March 2014); https://doi.org/10.1117/12.2048626
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KEYWORDS
Optical lithography

Lithography

Photomasks

193nm lithography

Electron beam lithography

Double patterning technology

Bridges

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