Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

Yoshiyuki Kikuchi; Yasuaki Sakakibara; Seiji Samukawa

doi:10.1117/12.2048898

28 March 2014 Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

Yoshiyuki Kikuchi, Yasuaki Sakakibara, Seiji Samukawa

Proceedings Volume 9054, Advanced Etch Technology for Nanopatterning III; 90540H (2014) https://doi.org/10.1117/12.2048898
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Pores in ultra-low-k carbon-doped silicon oxide (SiOCH) film have been a serious problem because they produce fragile film strength, with the film incurring damage from integration and diffusion of Cu atoms in thermal annealing. To address this problem, we developed a practical large-radius neutral beam enhanced CVD process to precisely control the film structure so as to eliminate any pores in the film. We used the process with dimethoxy-tetramethyl-disiloxane (DMOTMDS) as a precursor to form a SiOCH film on an 8-inch Si wafer and obtained a non-porous film having an ultra-low k-value of 2.2 with sufficient modulus (>10 GPa). Analyzing the film structure by experimental and theoretical techniques showed that symmetric polymethylsilaxane (PMS) chains were grown and cross-linked to each other in the film. This particular film did not incur any damage from acid or alkali solution or oxygen plasma. Furthermore, the dense film almost completely resisted Cu diffusion into it during thermal annealing.

Citation Download Citation

Yoshiyuki Kikuchi, Yasuaki Sakakibara, and Seiji Samukawa "Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH", Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540H (28 March 2014); https://doi.org/10.1117/12.2048898

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KEYWORDS

Copper

Plasma

Plasma enhanced chemical vapor deposition

Silicon

Annealing

Diffusion

Chemical species

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