Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond

Nihar Mohanty; Akiteru Ko; Christopher Cole; Vinayak Rastogi; Kaushik Kumar; Gerard Schmid; Richard Farrell; Todd Ryan; Erik Hosler; Ji Xu; Moshe Preil

doi:10.1117/12.2048320

28 March 2014 Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond

Nihar Mohanty, Akiteru Ko, Christopher Cole, Vinayak Rastogi, Kaushik Kumar, Gerard Schmid, Richard Farrell, Todd Ryan, Erik Hosler, Ji Xu, Moshe Preil

Author Affiliations +

Proceedings Volume 9054, Advanced Etch Technology for Nanopatterning III; 90540R (2014) https://doi.org/10.1117/12.2048320
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

In this paper, we demonstrate the unique advantage of dual-frequency mid-gap capacitively coupled plasma (m-CCP) in advanced node patterning process with regard to etch rate / depth uniformity and critical dimension (CD) control in conjunction with wider process window for aspect ratio dependent & microloading effects. Unlike the non-planar plasma sources, the simple design of the mid-gap CCPs enables both metal and non-metal hard-mask based patterning, which provides essential flexibility for conventional and DSA patterning. We present data on both, the conventional multi patterning as well as DSA patterning for trenches / fins and holes. Rigorous CD control and CDU is shown to be crucial for multi patterning as they lead to undesirable odd-even delta and pitch walking. For DSA patterning, co-optimized N_e / V_dc of the dual frequency CCPs would be demonstrated to be advantageous for higher organic-to-organic selectivity during co-polymer etching.

Citation Download Citation

Nihar Mohanty, Akiteru Ko, Christopher Cole, Vinayak Rastogi, Kaushik Kumar, Gerard Schmid, Richard Farrell, Todd Ryan, Erik Hosler, Ji Xu, and Moshe Preil "Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond", Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540R (28 March 2014); https://doi.org/10.1117/12.2048320

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