A graphene field effect transistor for high temperature sensing applications

Y. M. Banadaki; K. M. Mohsin; A. Srivastava

doi:10.1117/12.2044611

16 April 2014 A graphene field effect transistor for high temperature sensing applications

Y. M. Banadaki, K. M. Mohsin, A. Srivastava

Proceedings Volume 9060, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2014; 90600F (2014) https://doi.org/10.1117/12.2044611
Event: SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2014, San Diego, California, United States

Abstract

As power density keeps increasing tremendously in emerging VLSI nanotechnology, the sensing and monitoring of die temperature is vital, implying the need for high performance materials compatible with current CMOS technology. Graphene is a promising material for sensor applications due to its planar geometry and high electrical and thermal conductivity. In this work, we have explored the feasibility of a thin oxide graphene field effect transistor (G-FET) as a temperature sensor. The resistivity of the device has been calculated using the semi-classical transport equations considering the scattering mechanisms by substrate polar phonons and intrinsic phonons. The generated self-heating in graphene-silicon dioxide interface, silicon dioxide layer and back-gated silicon wafer has been also considered to extract the saturation velocity of graphene at high electric field and high temperature. We have found that the resistivity of GFET is highly sensitive to high ambient temperature variation. The calculated temperature coefficient of resistance (TCR) of G-FET at high temperatures (~600oC) is three times higher than room temperature exhibiting the highly sensitive resistance to high temperature variation. The resistance shows third order dependence on the ambient temperature in the range of 0 to 600oC and the TCR at high temperatures has been demonstrated a high dependence on the drain-source voltage ranging from 􀍳 􀵈 􀍳􀍲􀬿􀬷􀈀 􀀆 􀀃􀭭 to 􀍵􀇤􀍳􀍷 􀵈 􀍳􀍲􀬿􀬷􀈀 􀀆􀀃 􀭭 for the voltage spanning from 5V to 1V while that of low temperature is relatively unalterable.

Citation Download Citation

Y. M. Banadaki, K. M. Mohsin, and A. Srivastava "A graphene field effect transistor for high temperature sensing applications", Proc. SPIE 9060, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2014, 90600F (16 April 2014); https://doi.org/10.1117/12.2044611

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