Microstructural characterization of Bi2Te3 thin films prepared by hot wall epitaxy

Jianhua Guo; Huiyong Deng; Gujin Hu; Xiaonan Li; Guolin Yu; Ning Dai

doi:10.1117/12.2054129

16 December 2013 Microstructural characterization of Bi₂Te₃ thin films prepared by hot wall epitaxy

Jianhua Guo, Huiyong Deng, Gujin Hu, Xiaonan Li, Guolin Yu, Ning Dai

Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681J (2013) https://doi.org/10.1117/12.2054129
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China

Abstract

The influence of growth conditions on the microstructures of Bi₂Te₃ films grown on (111) and (100)-oriented GaAs substrates by hot wall epitaxy is investigated using X-ray diffraction, scan electron microscopy, energy dispersive spectrum, high resolution transmission electron microscopy and micro-Raman spectroscopy. It is found that high quality Bi₂Te₃ thin films with c-axis oriented are prepared when the temperatures of the Bi₂Te₃ source and (111) GaAs substrate are 505°C and 375°C respectively. The low substrate temperature and the crystal symmetry mismatch between the (100) GaAs substrate and Bi₂Te₃ epitaxial film make the crystalline grains mis-oriented, which are responsible for the degradation of the crystal quality of Bi2Te3 films. In addition, the low substrate temperature could lead to the non-stoichiometry.

Citation Download Citation

Jianhua Guo, Huiyong Deng, Gujin Hu, Xiaonan Li, Guolin Yu, and Ning Dai "Microstructural characterization of Bi₂Te₃ thin films prepared by hot wall epitaxy", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681J (16 December 2013); https://doi.org/10.1117/12.2054129

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