Paper
24 June 2014 A fabrication and characterictics of microbolometer detectors using VOx/ZnO/VOx multilayer thin film processing
Myung-Soo Han, Dae Hyeon Kim, Hang Ju Ko, Jae Chul Shin, Hyo Jin Kim, Do Gun Kim
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Abstract
In this work, a novel fabrication method for VOx-ZnO multilayers with mixed phase of the VO2 and V2O3 through the diffusion of oxygen by annealing at low temperature is presented. A stable sandwich structure of a VOx/ZnO/VOx multilayer was deposited at room temperature, through the oxygen gas flow rate, by RF sputtering system, and the mixed phase was formed through oxygen diffusion by annealing at O2 atmosphere. The results show that the single phase like multilayer formed by this process has a high TCR of more than -2.5%/K and low resistance of about 100 kohm at room temperature. XRD results for the as-deposited VOx/ZnO/VOx multilayer.
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Myung-Soo Han, Dae Hyeon Kim, Hang Ju Ko, Jae Chul Shin, Hyo Jin Kim, and Do Gun Kim "A fabrication and characterictics of microbolometer detectors using VOx/ZnO/VOx multilayer thin film processing", Proc. SPIE 9070, Infrared Technology and Applications XL, 90701X (24 June 2014); https://doi.org/10.1117/12.2049513
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Cited by 3 scholarly publications.
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KEYWORDS
Oxygen

Thin films

Multilayers

Microbolometers

Resistance

Annealing

Vanadium

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