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21 May 2014 InAsSb detector and FPA data and analysis
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InAsSb material with a cutoff wavelength in the 5 μm range has been grown on GaAs substrates. The MWIR InAsSb detector arrays were fabricated and hybridized to fanouts and ROICs to permit measurement of the electrical and optical properties of detectors. Detector arrays were fabricated in a 1024 x 1024 format on an 18 μm pitch. A fanout was utilized to directly acquire data from a set of selected detectors without an intervening read out integrating circuit (ROIC). Variable temperature Jdark vs Vd measurements have been made with the dark current density ~ 10-5 A/cm2 at 150 K. The external QE measured using a narrow band filter centered at ~ 4 μm had values in the 65 - 70 % range. Since the detectors were illuminated through a GaAs substrate which has a reflectance of 29%, the internal QE is greater than 90 %. A 1024 x 1024 ROIC on an 18 μm pitch was also designed and fabricated to interface with the barrier detectors. The ROIC operates at 30 Hz frame rate and has a well capacity of 20.7 M electrons. QE at 150 K for a 1024 x 1024 detector array hybridized to a ROIC had a median D* at 150 K under a flux of 1.07 x 1015 ph/(cm2/s was 1.2 x 1011 cm Hz1/2 /W. The NEdT was 44 mK and imagery was obtained at 150 K using an f/2.3 MWIR lens.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. I. D'Souza, E. Robinson, A. C. Ionescu, D. Okerlund, T. J. De Lyon, R. D. Rajavel, H. Sharifi, N. K. Dhar, P. S. Wijewarnasuriya, and C. Grein "InAsSb detector and FPA data and analysis", Proc. SPIE 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications, 91000B (21 May 2014);


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