Paper
21 May 2014 Wideband 220 GHz solid state power amplifier MMIC within minimal die size
Jerome Cheron, Erich N. Grossman
Author Affiliations +
Abstract
A wideband and compact solid state power amplifier MMIC is simulated around 220 GHz. It utilizes 6 μm emitter length common base HBTs from a 250 nm InP HBT technology. Specific power cells and power combiners are simulated in order to minimize the width of the die, which must not exceed 300 μm to avoid multimode propagation in the substrate. Four stages are implemented over a total area of the (275x1840) μm2. Simulations of this power amplifier indicate a minimum output power of 14 dBm associated with 16 dB of power gain from 213 GHz to 240 GHz.
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Jerome Cheron and Erich N. Grossman "Wideband 220 GHz solid state power amplifier MMIC within minimal die size", Proc. SPIE 9102, Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense, 91020H (21 May 2014); https://doi.org/10.1117/12.2050744
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KEYWORDS
Amplifiers

Solid state electronics

Astatine

Metals

Receivers

Semiconducting wafers

Solid state physics

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