Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Heather C. Chiamori; Chetan Angadi; Ateeq Suria; Ashwin Shankar; Minmin Hou; Sharmila Bhattacharya; Debbie G. Senesky

doi:10.1117/12.2050983

5 June 2014 Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Heather C. Chiamori, Chetan Angadi, Ateeq Suria, Ashwin Shankar, Minmin Hou, Sharmila Bhattacharya, Debbie G. Senesky

Author Affiliations +

Proceedings Volume 9113, Sensors for Extreme Harsh Environments; 911304 (2014) https://doi.org/10.1117/12.2050983
Event: SPIE Sensing Technology + Applications, 2014, Baltimore, MD, United States

Abstract

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Citation Download Citation

Heather C. Chiamori, Chetan Angadi, Ateeq Suria, Ashwin Shankar, Minmin Hou, Sharmila Bhattacharya, and Debbie G. Senesky "Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors", Proc. SPIE 9113, Sensors for Extreme Harsh Environments, 911304 (5 June 2014); https://doi.org/10.1117/12.2050983

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