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5 June 2014 Silicon carbide solid-state photomultiplier for UV light detection
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A Silicon Carbide Solid-State Photomultiplier (SiC-PM) was designed, fabricated and characterized for the first time. A die size of 3x3 mm2 has a 2x2 mm2 pixelated photosensitive area on it. The pixelated area consists of 16 sub-arrays of 0.5x0.5 mm2 with 64 pixels (60 μm pitch) in each sub-array. Each individual pixel has an integrated quenching resistor made of poly-silicon. Optical measurements of the SiC-PM were performed using fast UV LED with a wavelength of 300 nm demonstrating Geiger mode operation. Output signal waveforms measured at temperatures from 20°C to 200°C indicated temperature dependent time constants. The discrete nature of output signals indicated the capability of the SiC-PM to detect single photons from a faint UV light flux.
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Stanislav Soloviev, Sergei Dolinsky, Sabarni Palit, Xingguang Zhu, and Peter Sandvik "Silicon carbide solid-state photomultiplier for UV light detection", Proc. SPIE 9113, Sensors for Extreme Harsh Environments, 911305 (5 June 2014);

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