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5 June 2014 High temperature SiC pressure sensors with low offset voltage shift
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Abstract
Very low (~0.125 mV) shifts in offset voltage were achieved in silicon carbide (SiC) piezoresistive pressure sensors during thermal cycling between 25 and 500 °C for 500 hours. It resulted in reduced measurement error to ~ 0.36 % and ~ 0.9 % of the full-scale output at 25 and 500 °C, respectively. The reduction in the offset shift was the result of the advancement made in controlling the intermetallic diffusion and microstructural phase changes within the contact metallization. The low offset voltage results provide critical figures of merit needed for quantifying the measurement error and correction when the SiC pressure sensors are used. The results demonstrate more robust and reliable SiC pressure sensors operating with significantly reduced FSO errors at 500 °C.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert S. Okojie, Dorothy Lukco, Vu Nguyen, and Ender Savrun "High temperature SiC pressure sensors with low offset voltage shift", Proc. SPIE 9113, Sensors for Extreme Harsh Environments, 911308 (5 June 2014); https://doi.org/10.1117/12.2050812
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