Improvements to crystal quality of sapphire grown by the Kyropoulos method

John P. Ciraldo; Jonathan Levine; Hasitha Ganegoda

doi:10.1117/12.2049881

2 May 2014 Improvements to crystal quality of sapphire grown by the Kyropoulos method

John P. Ciraldo, Jonathan Levine, Hasitha Ganegoda

Proceedings Volume 9127, Photonic Crystal Materials and Devices XI; 91271C (2014) https://doi.org/10.1117/12.2049881
Event: SPIE Photonics Europe, 2014, Brussels, Belgium

Abstract

Strict process control, combined with proprietary process enhancements have enabled the production of large-scale single-crystal sapphire that demonstrates crystalline quality in excess of what has previously been possible. Extremely low defect densities, narrow rocking-curves, and very low stress gradients in the material are demonstrated through various X-ray diffraction techniques.

Citation Download Citation

John P. Ciraldo, Jonathan Levine, and Hasitha Ganegoda "Improvements to crystal quality of sapphire grown by the Kyropoulos method", Proc. SPIE 9127, Photonic Crystal Materials and Devices XI, 91271C (2 May 2014); https://doi.org/10.1117/12.2049881

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