On the photoluminescence of as-deposited Tb-doped silicon oxides and oxynitrides fabricated by ECR-PECVD

J. M. Ramírez; J. Wojcik; Y. Berencén; P. Mascher; B. Garrido

doi:10.1117/12.2052571

1 May 2014 On the photoluminescence of as-deposited Tb-doped silicon oxides and oxynitrides fabricated by ECR-PECVD

J. M. Ramírez, J. Wojcik, Y. Berencén, P. Mascher, B. Garrido

Proceedings Volume 9133, Silicon Photonics and Photonic Integrated Circuits IV; 913309 (2014) https://doi.org/10.1117/12.2052571
Event: SPIE Photonics Europe, 2014, Brussels, Belgium

Abstract

In-situ doping of Tb³⁺ ions in silicon oxides and oxynitrides deposited by electron-cyclotron-resonance plasma enhanced chemical-vapour (ECR-PECVD) has been performed. Oxygen and nitrogen gas flow rates were changed to produce a gradual substitution of oxygen by nitrogen in the host matrix. Bright green luminescence from as-deposited layers is observed by the naked eye under daylight conditions. Tbdoped nitrogen-rich samples showed a considerable photoluminescence (PL) enhancement compared to Tb-doped silicon oxides. An optimum layer composition for efficient Tb³⁺ excitation under non-resonant optical pumping is obtained. The combination of a low temperature treatment with bright luminescence could be instrumental for the development of light emitting devices in other platforms with more restrictive temperature requirements.

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J. M. Ramírez, J. Wojcik, Y. Berencén, P. Mascher, and B. Garrido "On the photoluminescence of as-deposited Tb-doped silicon oxides and oxynitrides fabricated by ECR-PECVD ", Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 913309 (1 May 2014); https://doi.org/10.1117/12.2052571

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