Electrical and electroluminescence properties of silicon nanocystals/SiO2 superlattices

Julian López-Vidrier; Yonder Berencén; Bernat Mundet; Sergi Hernández; Sebastian Gutsch; Daniel Hiller; Philipp Löper; Manuel Schnabel; Stefan Janz; Margit Zacharias; Blas Garrido

doi:10.1117/12.2052472

1 May 2014 Electrical and electroluminescence properties of silicon nanocystals/SiO₂ superlattices

Julian López-Vidrier, Yonder Berencén, Bernat Mundet, Sergi Hernández, Sebastian Gutsch, Daniel Hiller, Philipp Löper, Manuel Schnabel, Stefan Janz, Margit Zacharias, Blas Garrido

Author Affiliations +

Proceedings Volume 9133, Silicon Photonics and Photonic Integrated Circuits IV; 91331C (2014) https://doi.org/10.1117/12.2052472
Event: SPIE Photonics Europe, 2014, Brussels, Belgium

Abstract

The electrical and electroluminescence (EL) properties of Si-rich oxynitride (SRON)/SiO₂ superlattices are studied for different silicon excess and layer thicknesses. The precipitation and crystallization of the Si excess present within the SRON layers is induced by a post-deposition annealing treatment, in order to form Si nanocrystals (Si-NCs). The electrical characterization performed in dark conditions allowed for deducing the charge transport mechanism through the superlattice structure, found to follow the Poole-Frenkel law. In addition, the EL investigation revealed the correlation between EL excitation and transport mechanisms, suggesting that impact ionization of high-energy conduction electrons dominates the whole frame. The reduction of the SiO₂ barrier thickness and the increase in the Si excess were found to enhance the carrier transport through the superlattices due to the reduction of the electrons mean free path, which, in turn, modifies the EL properties.

Citation Download Citation

Julian López-Vidrier, Yonder Berencén, Bernat Mundet, Sergi Hernández, Sebastian Gutsch, Daniel Hiller, Philipp Löper, Manuel Schnabel, Stefan Janz, Margit Zacharias, and Blas Garrido "Electrical and electroluminescence properties of silicon nanocystals/SiO₂ superlattices", Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 91331C (1 May 2014); https://doi.org/10.1117/12.2052472

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available