Translator Disclaimer
30 July 2014 Superlattice-doped silicon detectors: progress and prospects
Author Affiliations +
In this paper we review the physics and performance of silicon detectors passivated with wafer-scale molecular beam epitaxy (MBE) and atomic layer deposition (ALD). MBE growth of a two-dimensional (2D) doping superlattice on backside-illuminated (BSI) detectors provides nearly perfect protection from interface traps, even at trap densities in excess of 1014 cm-2. Superlattice-doped, BSI CMOS imaging detectors show no measurable degradation of quantum efficiency or dark current from long-term exposure to pulsed DUV lasers. Wafer-scale superlattice-doping has been used to passivate CMOS and CCD imaging arrays, fully-depleted CCDs and photodiodes, and large-area avalanche photodiodes. Superlattice-doped CCDs with ALD-grown antireflection coatings achieved world record quantum efficiency at deep and far ultraviolet wavelengths (100-300nm). Recently we have demonstrated solar-blind, superlattice doped avalanche photodiodes using integrated metal-dielectric coatings to achieve selective detection of ultraviolet light in the 200-250 nm spectral range with high out-of-band rejection.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael E. Hoenk, Shouleh Nikzad, Alexander G. Carver, Todd J. Jones, John Hennessy, April D. Jewell, Joseph Sgro, Shraga Tsur, Mickel McClish, and Richard Farrell "Superlattice-doped silicon detectors: progress and prospects", Proc. SPIE 9154, High Energy, Optical, and Infrared Detectors for Astronomy VI, 915413 (30 July 2014);


Flash Technology for CCD Imaging in the UV
Proceedings of SPIE (December 10 1986)
Novel backside structure with improved energy resolution
Proceedings of SPIE (October 22 1999)
The CCD Flash Gate
Proceedings of SPIE (October 13 1986)
Charge-Coupled Device Pinning Technologies
Proceedings of SPIE (May 23 1989)

Back to Top