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28 August 2014 Optical orientation of electron spins in GaAs L-valleys
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Abstract
We report on optical orientation experiments in GaAs epilayers with excitation energies in the 3 eV region, leading the photo-generation of spin-polarized electrons in the satellite L valley. From both continuous-wave and time resolved measurements we show that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the Γ valley following an energy relaxation of several hundreds of meV. A typical L-valley electron spin relaxation time of 200 fs is deduced, in agreement with theoretical calculations.
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Andrea Balocchi, Philippe Barate, Tiantian Zhang, Thierry Amand, Pierre Renucci, Hélène Carrère, Bernhard Urbaszek, and Xavier Marie "Optical orientation of electron spins in GaAs L-valleys", Proc. SPIE 9167, Spintronics VII, 91670A (28 August 2014); https://doi.org/10.1117/12.2063921
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