It was recently realized that the spin Hall effect (SHE) can be very useful in the area of spintronics, due to its ability to
generate pure spin current from charge current, without the use of any magnetic materials or magnetic field. The
maximum conversion factor is given by the spin Hall angle 𝜃SH, which can take rather important values (above 10% in
absolute value was reported for β-Ta and β-W). This phenomenon is usually observed in materials with large spin-orbit
coupling, either intrinsic (Pt, Ta, W, etc.) or induced by heavy impurities (Cu doped with Bi or Ir). To investigate this
property, several groups studied the reciprocal effect, the so-called inverse spin Hall effect (ISHE), converting a pure
“pumped” spin current into a charge current (measured by voltage detection in an “open circuit”). We focus here on the
5d Pt material. Values published nowadays for 𝜃SH in Pt are scattered over one order of magnitude, with a clear
correlation between the spin diffusion length ℓsf and the 𝜃SH, both quantities being related to the spin-orbit strength or its
inverse. We performed measurements of spin pumping in a cavity and measured the resulting ISHE voltage. We propose
a model including spin-current discontinuity or spin memory loss at the interfaces that may reconcile all the different
observations. In particular, we demonstrate consistent values of spin diffusion length (ℓsf = 3.4 ± 0.4 nm) and spin Hall
angle (𝜃SH = 0.056 ± 0.010) for Pt in different metallic multilayer systems.
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