Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties

Christopher A. Nolph; Kiril R. Simov; Gopalakrishnan Ramalingam; Petra Reinke

doi:10.1117/12.2062487

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16 September 2014 Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties

Christopher A. Nolph, Kiril R. Simov, Gopalakrishnan Ramalingam, Petra Reinke

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Proceedings Volume 9174, Nanoepitaxy: Materials and Devices VI; 91740O (2014) https://doi.org/10.1117/12.2062487
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

The magnetic doping of Ge-QDs is highly coveted and has been pursued for several years. The Ge- Mn-Si substrate system presents a complex challenge, and the competition between dopant integration and formation of silicides, germanides and metastable phases makes the magnetic doping a considerable, and maybe insurmountable challenge. We will discuss the interaction of Mn with all growth surface, Si(100), Ge(100) wetting layer, and Ge{105} QD facet, as well as the co-deposition of Mn and Ge. The monoatomic Mn-wires, which form on Si(100), and their magnetic signatures allow unique insight into the relation between bonding and magnetism. We will close with an outlook on the feasibility of QD manipulation by controlling dopant-surface interactions.

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Christopher A. Nolph, Kiril R. Simov, Gopalakrishnan Ramalingam, and Petra Reinke "Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740O (16 September 2014); https://doi.org/10.1117/12.2062487

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