Nanoelectronic synaptic devices and materials for brain-inspired computational architectures

Rashmi Jha; Saptarshi Mandal

doi:10.1117/12.2065261

16 September 2014 Nanoelectronic synaptic devices and materials for brain-inspired computational architectures

Rashmi Jha, Saptarshi Mandal

Proceedings Volume 9174, Nanoepitaxy: Materials and Devices VI; 91740S (2014) https://doi.org/10.1117/12.2065261
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

To realize extreme-scale neuromorphic computation inspired by a biological brain, there is a need to develop two-terminal reconfigurable devices that can mimic the low-power specifications and scalability of a biological synapse. This paper discusses the synaptic characteristics of doped transition metal oxide based two-terminal devices. Spike-frequency dependent augmentation in conductance was observed. In addition, the devices could be reconfigured to different conductance states by changing the input pulse-width. This characteristic was used to demonstrate spike-timing dependent plasticity (STDP). The mechanism of reconfiguration is also briefly discussed.

Citation Download Citation

Rashmi Jha and Saptarshi Mandal "Nanoelectronic synaptic devices and materials for brain-inspired computational architectures", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740S (16 September 2014); https://doi.org/10.1117/12.2065261

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