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8 October 2014 Laser doping of germanium for photodetector applications
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A method of doping germanium using 1064 nm pulsed fiber laser was demonstrated. The secondary ion mass spectrometry showed a p-n junction of 800 nm deep with a peak phosphorus concentration of 2×1019 cm-3. Germanium photodiodes were fabricated on the laser-doped p-n junctions. Low bulk and surface leakage current values were obtained which were comparable to diodes fabricated by rapid thermal diffusion. Laser doping allows low thermal budget, minimization of surface desorption and selective doping without requiring photolithography. Laser doping was shown to be an effective method for fabrication of electronic and optoelectronic devices.
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Keye Sun, Yiliang Bao, and Mool C. Gupta "Laser doping of germanium for photodetector applications", Proc. SPIE 9180, Laser Processing and Fabrication for Solar, Displays, and Optoelectronic Devices III, 918008 (8 October 2014);

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