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1 January 1988 A Novel Dry Develop Method Of Photoresist - "Unzipping Development" By Flood UV Irradiation
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A novel dry develop method of photoresist - "unzipping development" by flood UV irradiation is described. Evaluated resist consisted of poly-methyl methacrylate (PMMA) and unzipping inhibitors such as p-benzoquinone (p-BQ) and 4,4'-diazide diphenylmethane(4,4'-DDM). As a preliminary experiment has shown that 4,4'-DDM was superior to p-BQ as an unzipping inhibitor, a resist : PMMA added with 40 wt% was mainly evaluated. At patterning exposure (600 ~ 1200 mJ/m2 at 210 ~ 280 nm), 4,4'-DDM in the exposed area fixed into polymer. Then, 4,4'-DDM in the unexposed area was removed in vacuo (0.4 mmHg at 120°C for 1 hr). Finally, negative resist pattern of 1.6 μm was developed by flood UV irradiation (24 J/cm2 at 254 nm) at 90 ~ 130°C without using any solvent. Mechanistic studies were carried out by using IR and UV analyses.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hayato Katsuragi, Masao Miyazaki, Norio Ishikawa, Kiyoto Mori, Hitomi Yamada, Shinzo Morita, and Shuzo Hattori "A Novel Dry Develop Method Of Photoresist - "Unzipping Development" By Flood UV Irradiation", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988);

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