Characterization Of Conditions Required To Implement Submicron Processes Over Topography Using Dry Develop Method(S)

Allen C. Spencer; John J. Grunwald; William F. Cordes III; William Moffatt; Ian Latchford; Tso-Ping Ma; Bomy Chen

doi:10.1117/12.968331

1 January 1988 Characterization Of Conditions Required To Implement Submicron Processes Over Topography Using Dry Develop Method(S)

Allen C. Spencer, John J. Grunwald, William F. Cordes III, William Moffatt, Ian Latchford, Tso-Ping Ma, Bomy Chen

Author Affiliations +

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968331
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

This paper describes problems encountered in VLSI imaging and pattern transfer, via dry develop, over topography steps up to 1.5 μ in height. The dry develop method studied in this paper involves a vapor-phase silylation process, with consideration being given relative to overall production needs. Specifically, the following issues are considered: a. The choice of the resist to be used in the silylation process: for example, it was noted that the rate/degree of silylation varies with spectral sensitivity of the photoresist (see Table I), i.e. I-line/mid UV systems have shown to be more successful than conventional G-line photoresists. Specifically, positive photoresists that contain coupled, 2-1-4 diazoquinone/novolak esters as sensi-tizers, appear less prone to residual "grass" formation. This being unwanted SiO, formation in the unexposed areas which are then transferred to the wafer surface. b. The type of silylating equipment, the silylating agent, silylating conditions relative to time, temperature, and pressure were evaluated. For this study, the incorporation of hexamethyldisilizane was utilized in a piece of equipment modified to heat the "HMDS", thereby increasing its vapor pressure. c. Processing conditions required for dry developing in Reactive Ion Etch (RIE) vs Magnetron Ion Etch (MIE) were evaluated such as power, pressure, gases, flow and time. d. The potential effects of other variables were also addressed, such as the "HMDS" vapor time and exposure energy requirements needed for adequate silicon/oxide formation. The effects of such variables were studied relative to their impact on the dry development/etch conditions needed.

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Allen C. Spencer, John J. Grunwald, William F. Cordes III, William Moffatt, Ian Latchford, Tso-Ping Ma, and Bomy Chen "Characterization Of Conditions Required To Implement Submicron Processes Over Topography Using Dry Develop Method(S)", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968331

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