Effects Of Ion Bombardment In Oxygen Plasma Etching

M. A. Hartney; W. M. Greene; D. S. Soane; D. W. Hess

doi:10.1117/12.968308

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1 January 1988 Effects Of Ion Bombardment In Oxygen Plasma Etching

M. A. Hartney, W. M. Greene, D. S. Soane, D. W. Hess

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Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968308
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

The relative roles of ion bombardment and oxygen radicals have been examined for oxygen plasma etching of common photoresists and silicon containing resists. The degree of oxygen dissociation in the plasma has been measured as a function of power and pressure in the reactor. Etch rates for hydrocarbon resists increase with pressure over the range studied, although the ion bombardment energy and the flux of oxygen radicals decrease. This indicates that the supply of neutral oxygen molecules is the limiting factor in the range of operating conditions (20 to 80 mtorr) typically found in reactive ion etching (RIE). The role of ion induced damage is small for standard resist etching but the damage aids in the formation of an oxide layer when etching silicon containing materials.

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M. A. Hartney, W. M. Greene, D. S. Soane, and D. W. Hess "Effects Of Ion Bombardment In Oxygen Plasma Etching", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968308

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