Paper
5 September 2014 Semiconductor neutron detectors using depleted uranium oxide
Craig A. Kruschwitz, Sanjoy Mukhopadhyay, David Schwellenbach, Thomas Meek, Brandon Shaver, Taylor Cunningham, Jerrad Philip Auxier
Author Affiliations +
Abstract
This paper reports on recent attempts to develop and test a new type of solid-state neutron detector fabricated from uranium compounds. It has been known for many years that uranium oxide (UO2), triuranium octoxide (U3O8) and other uranium compounds exhibit semiconducting characteristics with a broad range of electrical properties. We seek to exploit these characteristics to make a direct-conversion semiconductor neutron detector. In such a device a neutron interacts with a uranium nucleus, inducing fission. The fission products deposit energy-producing, detectable electron-hole pairs. The high energy released in the fission reaction indicates that noise discrimination in such a device has the potential to be excellent. Schottky devices were fabricated using a chemical deposition coating technique to deposit UO2 layers a few microns thick on a sapphire substrate. Schottky devices have also been made using a single crystal from UO2 samples approximately 500 microns thick. Neutron sensitivity simulations have been performed using GEANT4. Neutron sensitivity for the Schottky devices was tested experimentally using a 252Cf source.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Craig A. Kruschwitz, Sanjoy Mukhopadhyay, David Schwellenbach, Thomas Meek, Brandon Shaver, Taylor Cunningham, and Jerrad Philip Auxier "Semiconductor neutron detectors using depleted uranium oxide", Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 92130C (5 September 2014); https://doi.org/10.1117/12.2063501
Lens.org Logo
CITATIONS
Cited by 7 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Uranium

Semiconductors

Oxides

Crystals

Crystallography

Diodes

Back to Top