Design and growth of lead selenoiodide semiconductors crystals for radiation detection

David House; N. B. Singh; B. Arnold; Fow-Sen Choa; B. Schreib

doi:10.1117/12.2062047

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5 September 2014 Design and growth of lead selenoiodide semiconductors crystals for radiation detection

David House, N. B. Singh, B. Arnold, Fow-Sen Choa, B. Schreib

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Proceedings Volume 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI; 921314 (2014) https://doi.org/10.1117/12.2062047
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

We have designed experiments utilizing for achieving desired bandgap resistivity, electron hole-pairs by solid solution materials. A low temperature synthesis, purification and growth to reduce stress and high yield for low defect density crystals of PbI2-PbSe system was developed for low cost large volume high efficiency detectors. This material system can be used for γ-ray detection. The material design is based on the heavy metal halide and selenide solid-solution system. This novel multicomponent crystal involves innovative approach for synthesis, purification and low temperature growth from the melt in modified three- zone Bridgman furnace. Crystals up to 15 mm diameter were grown and cm size slabs were fabricated for evaluation. Our approach for shaped crystal growth previously used for crystal is an exciting approach to increase the yield and further reduce the fabrication cost. Preliminary results show high resistivity and large crystal growth feasibility for crystals using parent components.

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David House, N. B. Singh, B. Arnold, Fow-Sen Choa, and B. Schreib "Design and growth of lead selenoiodide semiconductors crystals for radiation detection", Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 921314 (5 September 2014); https://doi.org/10.1117/12.2062047

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