Paper
17 September 2014 Characterization of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by floating zone method
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Abstract
Recently, Cadmium Manganese Telluride (CMT) emerged as a promising material for roomtemperature X- and gamma-ray detectors. However, our studies revealed several material defects primarily related to growth processes that are impeding the production of large single crystals with high resistivity and high mobility-lifetime product. In this work, we characterized various defects in materials grown by the floating zone method, including twins, Te inclusions, and dislocations, using our unique facilities. We also fabricated detectors from selected CMT crystals and tested their performance. This paper discusses our detailed findings on the material’s properties and the performance of fabricated CMT detectors.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Hossain, G. D. Gu, A. E. Bolotnikov, G. S. Camarda, Y. Cui, R. Gul, U. N. Roy, G. Yang, T. Liu, R. Zhong, J. Schneeloch, and R. B. James "Characterization of cadmium manganese telluride (Cd1-xMnxTe) crystals grown by floating zone method", Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 92131N (17 September 2014); https://doi.org/10.1117/12.2063357
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KEYWORDS
Crystals

Sensors

Tellurium

Manganese

Semiconducting wafers

Cadmium

Etching

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