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1 January 1988 Resolution And Overlay Of Submicron I-Line Wafer Steppers
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Abstract
Using the i-line wavelength for production wafer steppers offers an improved combination of high resolution and large depth of focus compared to existing g-line steppers. A number of practical issues associated with i-line steppers include possible lens related absorption effects, lenses with insufficient field size or resolution, availability of i-line resist processes, accurate through the lens alignment, and multiple machine matching performance with low distortion lenses. Experimental results are presented in this paper on each of these issues. Data is presented for a multiple number of i-line steppers equipped with the Zeiss 10-78-58 lens.. Support of half-micron design rules is demonstrated. Resolution over the image field to 0.5 μm with a large depth of focus is shown and overlay performance to less than 150 nm is demonstrated.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Greeneich, Steve Wittekoek, Martin van den Brink, Barton Katz, and Jos Coolsen "Resolution And Overlay Of Submicron I-Line Wafer Steppers", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); https://doi.org/10.1117/12.968425
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