Understanding Focus Effects In Submicron Optical Lithography

Chris A Mack

doi:10.1117/12.968408

1 January 1988 Understanding Focus Effects In Submicron Optical Lithography

Chris A Mack

Proceedings Volume 0922, Optical/Laser Microlithography; (1988) https://doi.org/10.1117/12.968408
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

In the age of submicron optical lithography, focus has become a critical process parameter. Each decrease in minimum feature size is accompanied by a corresponding decrease in depth-of-focus (DOF). Sources of focus errors, such as wafer warpage, topography, and the thickness of the photoresist, however, are not being reduced in proportion to the DOF. Thus, the effects of focus on the practical resolution capabilities of a lithographic tool are becoming increasingly important.

Citation Download Citation

Chris A Mack "Understanding Focus Effects In Submicron Optical Lithography", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); https://doi.org/10.1117/12.968408

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