Frequency tunable photo-impedance sensor

Tanuj Saxena; Sergey Rumyantsev; Partha Dutta; Michael Shur

doi:10.1117/12.2062457

7 October 2014 Frequency tunable photo-impedance sensor

Tanuj Saxena, Sergey Rumyantsev, Partha Dutta, Michael Shur

Proceedings Volume 9220, Infrared Sensors, Devices, and Applications IV; 92200N (2014) https://doi.org/10.1117/12.2062457
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

We report on a transparent gate silicon MOS photo-impedance sensor, where a gated light sensitive semiconductor layer connects fixed capacitances. The resistance of the semiconductor and the capacitance of the MOS structure change with illumination. The frequency dispersion makes the coupling of these capacitances sensitive to light intensity extending the sensor dynamic range and tuning the sensitivity of the sensor. Our modeling results demonstrate advantages of this novel sensor in terms of sensitivity and dynamic range. The design and concept of this device could be extended to many other semiconductor materials, where frequency dispersion is related either to traps, or embedded nanoparticles or carrier generation processes.

Citation Download Citation

Tanuj Saxena, Sergey Rumyantsev, Partha Dutta, and Michael Shur "Frequency tunable photo-impedance sensor", Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200N (7 October 2014); https://doi.org/10.1117/12.2062457

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