Analysis of local charge-carrier diffusion length values in the photosensing film of photovoltaic HgCdTe FPA photodetectors

Alexei V. Vishnyakov; Victor A. Stuchinsky; Dmitry V. Brunev; Alexei V. Zverev; Sergey A. Dvoretsky

doi:10.1117/12.2061573

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7 October 2014 Analysis of local charge-carrier diffusion length values in the photosensing film of photovoltaic HgCdTe FPA photodetectors

Alexei V. Vishnyakov, Victor A. Stuchinsky, Dmitry V. Brunev, Alexei V. Zverev, Sergey A. Dvoretsky

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Proceedings Volume 9220, Infrared Sensors, Devices, and Applications IV; 92200W (2014) https://doi.org/10.1117/12.2061573
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

Two-dimensional diffusion model was used to analyze the charge-carrier diffusion process in the photosensitive film of photovoltaic HgCdTe IR FPA detectors with a continuous (without mesa-isolation of pixels) absorber layer. Some applications of the model and its inaccuracies are considered. Estimates of the local charge-carrier diffusion length values in the FPA regions under and outside photodiodes were obtained on the basis of spot-scan data.

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Alexei V. Vishnyakov, Victor A. Stuchinsky, Dmitry V. Brunev, Alexei V. Zverev, and Sergey A. Dvoretsky "Analysis of local charge-carrier diffusion length values in the photosensing film of photovoltaic HgCdTe FPA photodetectors", Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200W (7 October 2014); https://doi.org/10.1117/12.2061573

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