Ultrathin MBE-Grown Semiconductor Layer Masks For Focused Ga-Ion Beam Lithography

L R Harriott; H Temkin; M B Panish

doi:10.1117/12.945638

14 June 1988 Ultrathin MBE-Grown Semiconductor Layer Masks For Focused Ga-Ion Beam Lithography

L R Harriott, H Temkin, M B Panish

Proceedings Volume 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII; (1988) https://doi.org/10.1117/12.945638
Event: Medical Imaging II, 1988, Newport Beach, CA, United States

Abstract

The application of thin semiconductor layers as etch masks for high vacuum lithography is described. Heteroepitaxial layers of In0.53 Ga0.47 As or InP, as thin as 30Å, were grown by molecular beam epitaxy and patterned using a focused beam of Ga ions. The patterned thin layer is then used as a mask for deep, material selective etching. This combination of molecular beam epitaxy and efficient precise patterning techniques is expected to result in a new flexibility in design and fabrication of semiconductor devices.

Citation Download Citation

L R Harriott, H Temkin, and M B Panish "Ultrathin MBE-Grown Semiconductor Layer Masks For Focused Ga-Ion Beam Lithography", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945638

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