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17 October 2014 Scanner arc illumination and impact on EUV photomasks and scanner imaging
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Proceedings Volume 9231, 30th European Mask and Lithography Conference; 923109 (2014) https://doi.org/10.1117/12.2067578
Event: 30th European Mask and Lithography Conference, 2014, Dresden, Germany
Abstract
The combination of a reflective photomask with the non-telecentric illumination and arc shaped slit of the EUV scanner introduces what are known as shadowing effects. The compensation of these effects requires proper biasing of the photomask to generate the intended image on the wafer. Thus, the physical pattern on the mask ends up being noticeably different from the desired pattern to be written on the wafer. This difference has a strong dependence on both the illumination settings and the features to be printed. In this work, the impact of shadowing effects from line and space patterns with a nominal CD of 16nm at wafer was investigated with particular focus on the influence of pattern orientation and pitch, illumination pupil shape and fill (coherence) and absorber height. CD, best focus shift and contrast at best focus are utilized in detail in order to study the impact of the shadowing effects. All the simulation cases presented employ a complete scanner arc emulation, i.e. describe the impact of the azimuthal angle component of the illumination arc as in the NXE:3300 scanner and as it can be emulated by the AIMSTM EUV.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Renzo Capelli, Anthony Garetto, Krister Magnusson, and Thomas Scherübl "Scanner arc illumination and impact on EUV photomasks and scanner imaging ", Proc. SPIE 9231, 30th European Mask and Lithography Conference, 923109 (17 October 2014); https://doi.org/10.1117/12.2067578
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