High-throughput parallel SPM for metrology, defect, and mask inspection

H. Sadeghian; R. W. Herfst; T. C. van den Dool; W. E. Crowcombe; J. Winters; G. F. I. J. Kramer

doi:10.1117/12.2065939

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17 October 2014 High-throughput parallel SPM for metrology, defect, and mask inspection

H. Sadeghian, R. W. Herfst, T. C. van den Dool, W. E. Crowcombe, J. Winters, G. F. I. J. Kramer

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Proceedings Volume 9231, 30th European Mask and Lithography Conference; 92310B (2014) https://doi.org/10.1117/12.2065939
Event: 30th European Mask and Lithography Conference, 2014, Dresden, Germany

Abstract

Scanning probe microscopy (SPM) is a promising candidate for accurate assessment of metrology and defects on wafers and masks, however it has traditionally been too slow for high-throughput applications, although recent developments have significantly pushed the speed of SPM [1,2]. In this paper we present new results obtained with our previously presented high-throughput parallel SPM system [3,4] that showcase two key advances that are required for a successful deployment of SPM in high-throughput metrology, defect and mask inspection. The first is a very fast (up to 40 lines/s) image acquisition and a comparison of the image quality as function of speed. Secondly, a fast approach method: measurements of the scan-head approaching the sample from 0.2 and 1.0 mm distance in under 1.4 and 6 seconds respectively.

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H. Sadeghian, R. W. Herfst, T. C. van den Dool, W. E. Crowcombe, J. Winters, and G. F. I. J. Kramer "High-throughput parallel SPM for metrology, defect, and mask inspection", Proc. SPIE 9231, 30th European Mask and Lithography Conference, 92310B (17 October 2014); https://doi.org/10.1117/12.2065939

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