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17 October 2014 High-throughput parallel SPM for metrology, defect, and mask inspection
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Proceedings Volume 9231, 30th European Mask and Lithography Conference; 92310B (2014) https://doi.org/10.1117/12.2065939
Event: 30th European Mask and Lithography Conference, 2014, Dresden, Germany
Abstract
Scanning probe microscopy (SPM) is a promising candidate for accurate assessment of metrology and defects on wafers and masks, however it has traditionally been too slow for high-throughput applications, although recent developments have significantly pushed the speed of SPM [1,2]. In this paper we present new results obtained with our previously presented high-throughput parallel SPM system [3,4] that showcase two key advances that are required for a successful deployment of SPM in high-throughput metrology, defect and mask inspection. The first is a very fast (up to 40 lines/s) image acquisition and a comparison of the image quality as function of speed. Secondly, a fast approach method: measurements of the scan-head approaching the sample from 0.2 and 1.0 mm distance in under 1.4 and 6 seconds respectively.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Sadeghian, R. W. Herfst, T. C. van den Dool, W. E. Crowcombe, J. Winters, and G. F. I. J. Kramer "High-throughput parallel SPM for metrology, defect, and mask inspection", Proc. SPIE 9231, 30th European Mask and Lithography Conference, 92310B (17 October 2014); https://doi.org/10.1117/12.2065939
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