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21 August 2014 Enhancement AlGaAs/InGaAs quantum well intermixing by the technology of cycles annealing
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Proceedings Volume 9233, International Symposium on Photonics and Optoelectronics 2014; 92330H (2014) https://doi.org/10.1117/12.2068982
Event: International Symposium on Photonics and Optoelectronics (SOPO 2014), 2014, Suzhou, China
Abstract
The effect of intermixing in change InGaAs/AlGaAs quantum well structure using impurity-free vacancy disordering (IFVD) technique was investigated. Through the experiment we found that the magnitude of the blue shift changes with the annealing time and the thickness of the dielectric layer. The thicker dielectric layer under the same annealing temperature to withstand the longer, the larger blue shift we got. Cycle-annealing in high temperature for short time to ensure that quantum well were intermixing evidently under the condition of no obvious damage. 46 nm blue shift have been achieved by applying a cycle-annealing at 850°C in 6 minutes for 5 cyclesand the PL peak keep more than 80% of the as-grown sample. Finally, we found that the dielectric film of Si3N4 can suppress intermixing and protect the quality of the samples as the protective film.
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Jianjun Li, Shengjie Lin, Linjie He, Jun Han, and Jun Deng "Enhancement AlGaAs/InGaAs quantum well intermixing by the technology of cycles annealing ", Proc. SPIE 9233, International Symposium on Photonics and Optoelectronics 2014, 92330H (21 August 2014); https://doi.org/10.1117/12.2068982
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