Layout compliance for triple patterning lithography: an iterative approach

Bei Yu; Gilda Garreton; David Z. Pan

doi:10.1117/12.2066034

8 October 2014 Layout compliance for triple patterning lithography: an iterative approach

Bei Yu, Gilda Garreton, David Z. Pan

Author Affiliations +

Proceedings Volume 9235, Photomask Technology 2014; 923504 (2014) https://doi.org/10.1117/12.2066034
Event: SPIE Photomask Technology, 2014, Monterey, California, United States

Abstract

As the semiconductor process further scales down, the industry encounters many lithography-related issues. In the 14nm logic node and beyond, triple patterning lithography (TPL) is one of the most promising techniques for Metal1 layer and possibly Via0 layer. As one of the most challenging problems in TPL, recently layout decomposition efforts have received more attention from both industry and academia. Ideally the decomposer should point out locations in the layout that are not triple patterning decomposable and therefore manual intervention by designers is required. A traditional decomposition flow would be an iterative process, where each iteration consists of an automatic layout decomposition step and manual layout modification task. However, due to the NP-hardness of triple patterning layout decomposition, automatic full chip level layout decomposition requires long computational time and therefore design closure issues continue to linger around in the traditional flow. Challenged by this issue, we present a novel incremental layout decomposition framework to facilitate accelerated iterative decomposition. In the first iteration, our decomposer not only points out all conflicts, but also provides the suggestions to fix them. After the layout modification, instead of solving the full chip problem from scratch, our decomposer can provide a quick solution for a selected portion of layout. We believe this framework is efficient, in terms of performance and designer friendly.

Citation Download Citation

Bei Yu, Gilda Garreton, and David Z. Pan "Layout compliance for triple patterning lithography: an iterative approach", Proc. SPIE 9235, Photomask Technology 2014, 923504 (8 October 2014); https://doi.org/10.1117/12.2066034

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