Negative tone development process for ArF immersion extension

Kosuke Koshijima; Michihiro Shirakawa; So Kamimura; Keita Katou

doi:10.1117/12.2072470

8 October 2014 Negative tone development process for ArF immersion extension

Kosuke Koshijima, Michihiro Shirakawa, So Kamimura, Keita Katou

Author Affiliations +

Proceedings Volume 9235, Photomask Technology 2014; 92350O (2014) https://doi.org/10.1117/12.2072470
Event: SPIE Photomask Technology, 2014, Monterey, California, United States

Abstract

A negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for narrow trench pattern formation, which is effective to the double trench process that is one of the candidates of double patterning process for semiconductor devices below 20nm node. Significantly better resolution on narrow trench pattern and small CH pattern was observed with this negative tone development compared to positive tone development. These results suggest that this negative tone development process is one of the promising candidates for double trench process.

Citation Download Citation

Kosuke Koshijima, Michihiro Shirakawa, So Kamimura, and Keita Katou "Negative tone development process for ArF immersion extension", Proc. SPIE 9235, Photomask Technology 2014, 92350O (8 October 2014); https://doi.org/10.1117/12.2072470

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE