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Mask repair is an essential step in the mask manufacturing process as the extension of 193nm technology and the
insertion of EUV are drivers for mask complexity and cost. The ability to repair all types of defects on all mask blank
materials is crucial for the economic success of a mask shop operation. In the future mask repair is facing several
challenges. The mask minimum features sizes are shrinking and require a higher resolution repair tool. At the same time
mask blanks with different new mask materials are introduced to optimize optical performance and long term durability.
For EUV masks new classes of defects like multilayer and phase defects are entering the stage. In order to achieve a high
yield, mask repair has to cover etch and deposition capabilities and must not damage the mask. These challenges require
sophisticated technologies to bring mask repair to the next level. For high end masks ion-beam based and e-based repair
technologies are the obvious choice when it comes to the repair of small features. Both technologies have their pro and
cons. The scope of this paper is to review and compare the performance of ion-beam based mask repair to e-beam based
mask repair. We will analyze the limits of both technologies theoretically and experimentally and show mask repair
related performance data. Based on this data, we will give an outlook to future mask repair tools.
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K. Edinger, K. Wolff, H. Steigerwald, N. Auth, P. Spies, J. Oster, H. Schneider, M. Budach, T. Hofmann, M. Waiblinger, "Bringing mask repair to the next level," Proc. SPIE 9235, Photomask Technology 2014, 92350R (17 October 2014); https://doi.org/10.1117/12.2072474