A method of utilizing AIMS to quantify lithographic performance of high transmittance mask

Chun Seon Choi; Dong Sik Jang; Sung Hyun Oh; Jae Cheon Shin; Byungho Nam; Tae Joong Ha; Sang Pyo Kim; Dong Gyu Yim

doi:10.1117/12.2066283

29 October 2014 A method of utilizing AIMS to quantify lithographic performance of high transmittance mask

Chun Seon Choi, Dong Sik Jang, Sung Hyun Oh, Jae Cheon Shin, Byungho Nam, Tae Joong Ha, Sang Pyo Kim, Dong Gyu Yim

Author Affiliations +

Proceedings Volume 9235, Photomask Technology 2014; 92351R (2014) https://doi.org/10.1117/12.2066283
Event: SPIE Photomask Technology, 2014, Monterey, California, United States

Abstract

EUV (Extreme Ultraviolet) Lithography has been delayed caused by several technical problems such as EUV mask, source power and etc. So ArF immersion lithography has been continued with adopting new technology. Especially, the wafer lithography tends to increase rapidly NTD(Negative Tone Develop) process for overcoming high resolution such as small hole type patterns. For wafer NTD process, the pattern shape in mask has changed from hole pattern to dot pattern. Also the local CD uniformity of aerial image is getting more important. In this paper, we studied local CD uniformity with analyzing aerial images of high transmittance HT-PSM (attenuated phase-shift mask) and conventional 6% HT-PSM from AIMS (Aerial Image Measurement System) tool. Additionally, several cell sizes were analyzed to find an optimum target cell size which has good wafer performance and AIMS aerial image. And we analyzed NILS(Normalized Image Log Slope) factor which represent wafer photolithographic performance. Furthermore, we analyzed not only AIMS NILS simulation, but also wafer lithographic performance.

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Chun Seon Choi, Dong Sik Jang, Sung Hyun Oh, Jae Cheon Shin, Byungho Nam, Tae Joong Ha, Sang Pyo Kim, and Dong Gyu Yim "A method of utilizing AIMS to quantify lithographic performance of high transmittance mask", Proc. SPIE 9235, Photomask Technology 2014, 92351R (29 October 2014); https://doi.org/10.1117/12.2066283

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