Use of ILT-based mask optimization for local printability enhancement

Alexander Tritchkov; Sergey Kobelkov; Sergei Rodin; Kyohei Sakajiri; Evgueni Egorov; Soung-Su Woo

doi:10.1117/12.2068493

28 July 2014 Use of ILT-based mask optimization for local printability enhancement

Alexander Tritchkov, Sergey Kobelkov, Sergei Rodin, Kyohei Sakajiri, Evgueni Egorov, Soung-Su Woo

Proceedings Volume 9256, Photomask and Next-Generation Lithography Mask Technology XXI; 92560X (2014) https://doi.org/10.1117/12.2068493
Event: Photomask Japan 2014, 2014, Yokohama, Japan

Abstract

In this paper we study the trade-offs and benefits of using ILT-based SRAF placement/OPC over conventional SRAF placement/OPC for various front-end and back-end design configurations on a full chip. We explore the use models and benefits of using ILT-based Local Printability Enhancement (LPE) in an automated flow to eliminate hot spots that can be present on the full chip after conventional SRAF placement/OPC. We study the impact on process-window, performance, and mask manufacturability.

Citation Download Citation

Alexander Tritchkov, Sergey Kobelkov, Sergei Rodin, Kyohei Sakajiri, Evgueni Egorov, and Soung-Su Woo "Use of ILT-based mask optimization for local printability enhancement", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560X (28 July 2014); https://doi.org/10.1117/12.2068493

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